• DocumentCode
    1040614
  • Title

    Electrochemically passivated contacts for silicon solar cells

  • Author

    Fischer, H. ; Gereth, R.

  • Author_Institution
    AEG-Telefunken, Heilbronn, Germany
  • Volume
    18
  • Issue
    8
  • fYear
    1971
  • fDate
    8/1/1971 12:00:00 AM
  • Firstpage
    459
  • Lastpage
    464
  • Abstract
    Electrochemically passivated Ti(Pd)Ag contacts for Si solar cells have been developed. The passivation is accomplished by shifting the electrochemical exchange potential of the Ti/Ag couple into positive direction by the addition of a layer of Pd between the Ti and the Ag layers. The new contacts do not degrade during humidity stress tests. They withstand temperature cycling from -- 196°C to +150°C, can be subjected to high temperatures, and are compatible with solderless interconnection schemes.
  • Keywords
    Bonding; Contact resistance; Corrosion; P-n junctions; Photovoltaic cells; Silicon; Solar power generation; Soldering; Temperature; Welding;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1971.17228
  • Filename
    1476550