DocumentCode :
1040614
Title :
Electrochemically passivated contacts for silicon solar cells
Author :
Fischer, H. ; Gereth, R.
Author_Institution :
AEG-Telefunken, Heilbronn, Germany
Volume :
18
Issue :
8
fYear :
1971
fDate :
8/1/1971 12:00:00 AM
Firstpage :
459
Lastpage :
464
Abstract :
Electrochemically passivated Ti(Pd)Ag contacts for Si solar cells have been developed. The passivation is accomplished by shifting the electrochemical exchange potential of the Ti/Ag couple into positive direction by the addition of a layer of Pd between the Ti and the Ag layers. The new contacts do not degrade during humidity stress tests. They withstand temperature cycling from -- 196°C to +150°C, can be subjected to high temperatures, and are compatible with solderless interconnection schemes.
Keywords :
Bonding; Contact resistance; Corrosion; P-n junctions; Photovoltaic cells; Silicon; Solar power generation; Soldering; Temperature; Welding;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1971.17228
Filename :
1476550
Link To Document :
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