DocumentCode
1040614
Title
Electrochemically passivated contacts for silicon solar cells
Author
Fischer, H. ; Gereth, R.
Author_Institution
AEG-Telefunken, Heilbronn, Germany
Volume
18
Issue
8
fYear
1971
fDate
8/1/1971 12:00:00 AM
Firstpage
459
Lastpage
464
Abstract
Electrochemically passivated Ti(Pd)Ag contacts for Si solar cells have been developed. The passivation is accomplished by shifting the electrochemical exchange potential of the Ti/Ag couple into positive direction by the addition of a layer of Pd between the Ti and the Ag layers. The new contacts do not degrade during humidity stress tests. They withstand temperature cycling from -- 196°C to +150°C, can be subjected to high temperatures, and are compatible with solderless interconnection schemes.
Keywords
Bonding; Contact resistance; Corrosion; P-n junctions; Photovoltaic cells; Silicon; Solar power generation; Soldering; Temperature; Welding;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1971.17228
Filename
1476550
Link To Document