DocumentCode :
1040684
Title :
The epi channel switch
Author :
Johnson, Brant T.
Author_Institution :
General Telephone and Electronics Laboratories, Waltham, Mass.
Volume :
18
Issue :
8
fYear :
1971
fDate :
8/1/1971 12:00:00 AM
Firstpage :
525
Lastpage :
527
Abstract :
The processing steps to build and the operation of a novel complementary device structure are discussed. The device achieves both a six times improvement in 
figure of merit by a 2.5-to-1 reduction in channel length and a packing density on the order of 1 × 105gates/in2as a result of its vertical construction.
figure of merit by a 2.5-to-1 reduction in channel length and a packing density on the order of 1 × 105gates/in2as a result of its vertical construction.Keywords :
Conductivity; Control systems; Impedance; Impurities; Inverters; Logic circuits; Microscopy; Nanoscale devices; Switches; Temperature;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1971.17236
Filename :
1476558
Link To Document :
