Title :
9.5 GHz GaInP/GaAs HBT divide-by-two frequency divider using super-dynamic D-type flip-flop technique
Author :
Wei, H.-J. ; Meng, C. ; Chang, Y.-W. ; Huang, G.W.
Author_Institution :
Nat. Chiao Tung Univ., Hsinchu
Abstract :
A frequency divider with super-dynamic D-type flip-flop is demonstrated in 2 μm GalnP/GaAs HBT (fT = 40 GHz) technology. By biasing the HBT devices around tire peak transit-time frequency (fT), the operating frequency of a D-FF with ECNFP (emitter-coupled negative feedback pairs) can be improved. At a supply voltage of 5 y a divide-by-two function of 9.5 GHz is achieved.
Keywords :
III-V semiconductors; flip-flops; frequency dividers; gallium arsenide; heterojunction bipolar transistors; indium compounds; microwave bipolar transistors; ECNFP; GaInP-GaAs; HBT; divide-by-two frequency divider; emitter-coupled negative feedback pairs; frequency 9.5 GHz; super-dynamic D-type flip flop technique; tire peak transit-time frequency;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20070727
