Title :
Radiation effects on the SVX silicon strip readout chip
Author :
Yarema, R.J. ; Amidei, D. ; Bohn, T. ; Zimmerman, T. ; Ely, R.P. ; Haber, C. ; Kleinfelder, S. ; Wester, W. ; Vejcik, S.
Author_Institution :
Fermi Nat. Accel. Lab., Batavia, IL, USA
fDate :
4/1/1990 12:00:00 AM
Abstract :
A study of radiation effects on early versions of the SVX silicon strip readout device is reported. Test structures and full operating readout chips were exposed to cobalt-60 gamma radiation and neutrons. Transistor threshold shifts and input noise density as a function of radiation are reported. Equivalent input noise as a function of radiation is also presented. In order to show the environment in which the SVX chip will operate and help interpret the radiation test results, measurements of radiation levels inside the Fermilab Colliding Detector Facility (CDF) were made. These results are reported for the last CDF run. The cobalt-60 measurements show that the SVXC devices are made with a process which is relatively soft
Keywords :
nuclear electronics; semiconductor counters; 60Co gamma radiation; Fermilab Colliding Detector Facility; SVX Si strip readout chip; full operating readout chips; input noise density; neutrons; radiation effects; Cobalt; Interface states; Neutrons; Radiation detectors; Radiation effects; Semiconductor device measurement; Silicon; Strips; Testing; Threshold voltage;
Journal_Title :
Nuclear Science, IEEE Transactions on
