DocumentCode
1040966
Title
Free engineering of buried oxide patterns in GaAs/AlAs epitaxial structures
Author
Amat, C. ; Almuneau, G. ; Gallo, P. ; Jalabert, L. ; Moumdji, S. ; Dubreuil, P. ; Camps, T. ; Doucet, J.B. ; Havard, E. ; Bardinal, V. ; Fontaine, C. ; Munoz-Yague, A.
Author_Institution
Univ. de Toulouse, Toulouse
Volume
43
Issue
13
fYear
2007
Firstpage
730
Lastpage
732
Abstract
The formation of a buried aluminium oxide from the surface of a GaAs/AlAs epitaxial structure is presented and validated through the localised electroluminescence in a light emitting diode device. This oxidation method relies on photolithography, plasma treatment and wet thermal oxidation. This enables localised buried oxide areas to be formed by a vertical oxidation process applied from the surface. Because of this new technology, the shape of the oxidised areas can be freely designed, unlike when using the standard lateral oxidation technology.
Keywords
aluminium compounds; epitaxial layers; gallium arsenide; light emitting diodes; oxidation; photolithography; GaAs/AlAs epitaxial structures; buried aluminium oxide; buried oxide patterns; free engineering; lateral oxidation; light emitting diode device; localised buried oxide; localised electroluminescence; photolithography; plasma treatment; vertical oxidation; wet thermal oxidation;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:20070974
Filename
4263107
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