Title :
Approach to improve ZnO-based FBAR devices
Author :
Mai, L. ; Lee, J.-Y. ; Pham, V.-S. ; Yoon, G.
Author_Institution :
Inf. & Commun. Univ., Daejeon
Abstract :
Presented is a new technique to improve the resonance characteristics of film bulk acoustic-wave resonator (FBAR) devices. The FBAR devices were fabricated on multilayer Bragg reflectors into which ultra-thin chromium (Cr) adhesion layers were inserted, followed by several kinds of thermal annealing processes. This technique resulted in excellent device improvement in terms of return loss and Q-factors.
Keywords :
bulk acoustic wave devices; reflector antennas; Q-factor; film bulk acoustic-wave resonator; multilayer Bragg reflector; resonance characteristics; thermal annealing process; ultra-thin chromium adhesion layer;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20070914
