• DocumentCode
    1040999
  • Title

    Approach to improve ZnO-based FBAR devices

  • Author

    Mai, L. ; Lee, J.-Y. ; Pham, V.-S. ; Yoon, G.

  • Author_Institution
    Inf. & Commun. Univ., Daejeon
  • Volume
    43
  • Issue
    13
  • fYear
    2007
  • Firstpage
    735
  • Lastpage
    737
  • Abstract
    Presented is a new technique to improve the resonance characteristics of film bulk acoustic-wave resonator (FBAR) devices. The FBAR devices were fabricated on multilayer Bragg reflectors into which ultra-thin chromium (Cr) adhesion layers were inserted, followed by several kinds of thermal annealing processes. This technique resulted in excellent device improvement in terms of return loss and Q-factors.
  • Keywords
    bulk acoustic wave devices; reflector antennas; Q-factor; film bulk acoustic-wave resonator; multilayer Bragg reflector; resonance characteristics; thermal annealing process; ultra-thin chromium adhesion layer;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20070914
  • Filename
    4263110
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1040999