Title :
A conceptual model of a single-event gate-rupture in power MOSFETs
Author :
Brews, J.R. ; Allenspach, M. ; Schrimpf, R.D. ; Galloway, K.F. ; Titus, J.L. ; Wheatley, C. Frank
Author_Institution :
Electr. & Comput. Eng. Dept., Univ. of Arizona, Tucson, AZ, USA
fDate :
12/1/1993 12:00:00 AM
Abstract :
Proposes a physical model of hole-collection following a heavy-ion strike to explain the development of oxide fields sufficient to cause single-event gate rupture (SEGR) in power MOSFETs. It is found that the size of the maximum field and the time at which it is attained are strongly affected by the hole mobility. Oxide fields larger than the intrinsic breakdown strength of the oxide can arise from the holes collecting at the interface and their image charge in the gate electrode. These high fields persist for times of the order of picoseconds. It is not known how long these fields must persist to initiate SEGR
Keywords :
carrier mobility; electric breakdown of solids; insulated gate field effect transistors; ion beam effects; power transistors; semiconductor device models; SEGR; heavy-ion strike; hole mobility; hole-collection; image charge; intrinsic breakdown strength; oxide fields; power MOSFETs; single-event gate-rupture; Bipolar transistors; Electric breakdown; Electrodes; FETs; Lead compounds; MOSFETs; Plasma sheaths; Power supplies; Visualization; Voltage;
Journal_Title :
Nuclear Science, IEEE Transactions on
