Simple model for proton-induced latch-up

Author

McNulty, P.J. ; Abdel-Kader, W.G. ; Beauvais, W.J. ; Adams, L. ; Daly, E.J. ; Harboe-Sorensen, R.

Author_Institution

Clemson Univ., SC, USA

Volume

40

Issue

6

fYear

1993

fDate

12/1/1993 12:00:00 AM

Firstpage

1947

Lastpage

1951

Abstract

Computer simulations show that the strong angular dependence exhibited by proton-induced single-event latch-up can be explained by a simple mechanism. Latch-up occurs if, and only if, more than some threshold amount of energy is deposited within the sensitive volume. A procedure for determining the SEU (single event upset) parameters by comparing SEU cross sections and CUPID simulations at different incident energies and angles of incidence is described. The thickness of the sensitive volume and the value of the critical charge determined for the NEC 4464, a 64-kb CMOS SRAM (static random-access memory) agrees with the measured thickness of the p-well and the value of the threshold LET (linear energy transfer) determined using heavy ions

Keywords

CMOS integrated circuits; SRAM chips; integrated circuit testing; proton effects; CMOS SRAM; CUPID simulations; SEU; SEU cross sections; angles of incidence; critical charge; heavy ions; incident energies; p-well; proton-induced latch-up; sensitive volume; single-event latch-up; threshold LET; threshold amount; Charge measurement; Computer simulation; Current measurement; Discrete event simulation; Energy measurement; National electric code; Random access memory; Single event upset; Thickness measurement; Volume measurement;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.273459

Filename

273459