Single-event dynamics of high-performance HBTs and GaAs MESFETs

Author

McMorrow, Dale ; Weatherford, Todd ; Knudson, Alvin R. ; Tran, Lan Hu ; Melinger, Joseph S. ; Campbel, Arthur B.

Author_Institution

US Naval Res. Lab., Washington, DC, USA

Volume

40

Issue

6

fYear

1993

fDate

12/1/1993 12:00:00 AM

Firstpage

1858

Lastpage

1866

Abstract

Picosecond charge-collection transients measured for GaAs/AlGaAs HBTs (heterojunction bipolar transistors) following 3.0-MeV α-particle and 620-nm picosecond laser excitation reveal charge-collection efficiencies up to 28 times smaller than for GaAs MESFETs, with ~90% of the charge collected within 75 ps of the ionizing event. The small charge-collection efficiency of the HBTs is a consequence of the ultrafast charge-collection dynamics in these devices. It is shown that picosecond laser excitation reproduces the ion-induced transients nicely providing a valuable tool for the investigation of charge-collection and SEU (single event upset) phenomena in these devices

Keywords

III-V semiconductors; Schottky gate field effect transistors; alpha-particle effects; heterojunction bipolar transistors; laser beam effects; transients; α-particle excitation; 30 MeV; 620 nm; GaAs MESFETs; SEU; charge-collection efficiency; charge-collection transients; high-performance HBTs; ion-induced transients; ionizing event; picosecond laser excitation; Charge measurement; Current measurement; Gallium arsenide; Heterojunction bipolar transistors; Laboratories; MESFETs; Optical pulses; Pulsed laser deposition; Single event upset; Space technology;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.273469

Filename

273469