Title :
The influence of heavy doping on the emitter efficiency of a bipolar transistor
Author :
De Man, Hugo J J
Author_Institution :
University of California, Berkeley, Calif.
fDate :
10/1/1971 12:00:00 AM
Abstract :
The emitter efficiency current gain βγis calculated taking into account the effect of the bandgap decrease caused by heavy doping of the emitter. It is found that this effect reduces the emitter efficiency and explains experimental results on the temperature dependence of the current gain. It also predicts an optimum emitter doping for a given base doping.
Keywords :
Atomic measurements; Bipolar transistors; Charge carrier processes; Doping profiles; Electron emission; Helium; Impurities; Neodymium; Photonic band gap; Semiconductor process modeling;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1971.17291
