DocumentCode :
1041272
Title :
GaAs LSA V-band oscillators
Author :
Barrera, Joseph S.
Author_Institution :
Hewlett-Packard Laboratories, Palo Alto, Calif.
Volume :
18
Issue :
10
fYear :
1971
fDate :
10/1/1971 12:00:00 AM
Firstpage :
866
Lastpage :
872
Abstract :
GaAs devices verify practical LSA mode operation at V-band frequencies (50-75 GHz). The limitations on power and efficiency are characterized including the dependence of efficiency on electron concentration. The maximum CW power level is 62 mW with an efficiency of 2.2 percent at 64 GHz. The peak power and efficiency is 137 mW and 3.71 percent at 64 GHz for 5 percent duty, pulsed operation. A maximum in the CW efficiency occurs at an n/f ratio of 1.1 × 105s . cm-3corresponding to a doping of 6.6 × 1015cm-3for a frequency of 60 GHz. Device design curves are presented for CW operation subject to Copeland´s LSA mode criteria and to a maximum allowed sample temperature rise. Details of a vane circuit are presented which provide V-band resonances and a proper RF environment for LSA-related operation.
Keywords :
Bonding; Doping; Gallium arsenide; Heat sinks; Oscillators; Performance analysis; Temperature distribution; Thermal conductivity; Threshold current; Threshold voltage;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1971.17297
Filename :
1476619
Link To Document :
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