Title :
Radiation response of silicon on diamond (SOD) devices
Author :
Annamalai, N.K. ; Sawyer, Jon ; Karulkar, Pramod ; Maszara, Witek ; Landstrass, Maurice
Author_Institution :
Phillips Lab., Hanscom AFB, MA, USA
fDate :
12/1/1993 12:00:00 AM
Abstract :
Field effect transistors have been fabricated on two types of silicon-on-diamond (SOD) structures. The radiation response of the transistors has been studied. The results are compared with the radiation response of simultaneously fabricated SIMOX (separation by implantation of oxygen) devices. The extreme radiation hardness of CVD (chemical vapor deposited) diamond films is established by using an MIS capacitor structure and the ZMRSOD (zone melting recrystallization SOD) quick turn-around back channel MISFET structure. The feasibility of fabricating BESOD (bond and etchback SOD) FETs has been demonstrated, but the radiation hardness of the buried diamond in the BESOD structure could not be proven due to the excessive electrical conductivity of the buried diamond film
Keywords :
X-ray effects; diamond; elemental semiconductors; insulated gate field effect transistors; metal-insulator-semiconductor devices; radiation hardening (electronics); semiconductor device testing; silicon; zone melting; BESOD FET; C; CVD diamond films; FET; MIS capacitor structure; Si on diamond; Si-C; X-ray irradiation; ZMRSOD; excessive electrical conductivity; quick turn-around back channel MISFET structure; radiation hardness; radiation response; zone melting recrystallization SOD; Chemical technology; Crystallization; FETs; Fabrication; Insulation; Laboratories; Radiation hardening; Semiconductor films; Silicon on insulator technology; Substrates;
Journal_Title :
Nuclear Science, IEEE Transactions on
