Radiation response of silicon on diamond (SOD) devices

Author

Annamalai, N.K. ; Sawyer, Jon ; Karulkar, Pramod ; Maszara, Witek ; Landstrass, Maurice

Author_Institution

Phillips Lab., Hanscom AFB, MA, USA

Volume

40

Issue

6

fYear

1993

fDate

12/1/1993 12:00:00 AM

Firstpage

1780

Lastpage

1786

Abstract

Field effect transistors have been fabricated on two types of silicon-on-diamond (SOD) structures. The radiation response of the transistors has been studied. The results are compared with the radiation response of simultaneously fabricated SIMOX (separation by implantation of oxygen) devices. The extreme radiation hardness of CVD (chemical vapor deposited) diamond films is established by using an MIS capacitor structure and the ZMRSOD (zone melting recrystallization SOD) quick turn-around back channel MISFET structure. The feasibility of fabricating BESOD (bond and etchback SOD) FETs has been demonstrated, but the radiation hardness of the buried diamond in the BESOD structure could not be proven due to the excessive electrical conductivity of the buried diamond film

Keywords

X-ray effects; diamond; elemental semiconductors; insulated gate field effect transistors; metal-insulator-semiconductor devices; radiation hardening (electronics); semiconductor device testing; silicon; zone melting; BESOD FET; C; CVD diamond films; FET; MIS capacitor structure; Si on diamond; Si-C; X-ray irradiation; ZMRSOD; excessive electrical conductivity; quick turn-around back channel MISFET structure; radiation hardness; radiation response; zone melting recrystallization SOD; Chemical technology; Crystallization; FETs; Fabrication; Insulation; Laboratories; Radiation hardening; Semiconductor films; Silicon on insulator technology; Substrates;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.273479

Filename

273479