The P-channel refractory metal self-registered MOSFET

In this paper p-channel self-registered Mo gate MOSFET fabrication techniques are described and tested. Excellent p-channel devices resulted. Device characteristics including junction characteristics, threshold, stability, effective channel mobilities, and Si-SiO2interface studies are examined and compared with theoretical predictions. Simple processing steps yielded FETs whose threshold is predictably controlled by the intrinsic properties of Mo and the Si-SiO2system. Effective mobility theory matches the data at low fields, but at high fields theory predicts values that are too low. Similarly constructed integrated circuits are T²L compatible with excellent threshold reproducibility and exhibit stability during accelerated temperature-bias life testing.