Title :
A monolithically integrated detector-preamplifier on high-resistivity silicon
Author :
Holland, S. ; Spieler, H.
Author_Institution :
Lawrence Berkeley Lab., California Univ., CA, USA
fDate :
4/1/1990 12:00:00 AM
Abstract :
A monolithically integrated detector-preamplifier on high-resistivity silicon has been designed, fabricated, and characterized. The detector is a fully depleted p-i-n diode, and the preamplifier is implemented in a depletion-mode PMOS process which is compatible with detector processing. The amplifier is internally compensated, and the measured gain-bandwidth product is 30 MHz with an input-referred noise of 15 nV/√Hz in the white-noise regime. Measurements with an Am241 radiation source yield an equivalent input noise charge of 800 electrons at 200 ns shaping time for a 1.4 mm2 detector with on-chip amplifier in an experimental setup with substantial external pickup
Keywords :
nuclear electronics; radiation detection and measurement; silicon; 241Am radiation source; depletion-mode PMOS process; detector processing; equivalent input noise charge; external pickup; fully depleted p-i-n diode; high-resistivity Si; input-referred noise; measured gain-bandwidth product; monolithically integrated detector-preamplifier; on-chip amplifier; shaping time; white-noise regime; Charge measurement; Current measurement; Detectors; Gain measurement; Noise measurement; Noise shaping; P-i-n diodes; Preamplifiers; Silicon; Time measurement;
Journal_Title :
Nuclear Science, IEEE Transactions on
