A monolithically integrated detector-preamplifier on high-resistivity silicon

Author

Holland, S. ; Spieler, H.

Author_Institution

Lawrence Berkeley Lab., California Univ., CA, USA

Volume

37

Issue

2

fYear

1990

fDate

4/1/1990 12:00:00 AM

Firstpage

463

Lastpage

468

Abstract

A monolithically integrated detector-preamplifier on high-resistivity silicon has been designed, fabricated, and characterized. The detector is a fully depleted p-i-n diode, and the preamplifier is implemented in a depletion-mode PMOS process which is compatible with detector processing. The amplifier is internally compensated, and the measured gain-bandwidth product is 30 MHz with an input-referred noise of 15 nV/√Hz in the white-noise regime. Measurements with an Am²⁴¹ radiation source yield an equivalent input noise charge of 800 electrons at 200 ns shaping time for a 1.4 mm² detector with on-chip amplifier in an experimental setup with substantial external pickup

Keywords

nuclear electronics; radiation detection and measurement; silicon; ²⁴¹Am radiation source; depletion-mode PMOS process; detector processing; equivalent input noise charge; external pickup; fully depleted p-i-n diode; high-resistivity Si; input-referred noise; measured gain-bandwidth product; monolithically integrated detector-preamplifier; on-chip amplifier; shaping time; white-noise regime; Charge measurement; Current measurement; Detectors; Gain measurement; Noise measurement; Noise shaping; P-i-n diodes; Preamplifiers; Silicon; Time measurement;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.106663

Filename

106663