DocumentCode
1041457
Title
Thermal noise in the hot electron regime in FET´s
Author
van der Ziel, A.
Volume
18
Issue
10
fYear
1971
fDate
10/1/1971 12:00:00 AM
Firstpage
977
Lastpage
977
Abstract
Klaassen has given two different formulas for the thermal noise in the conducting channel of FETs in the hot electron regime. It is shown that the first published formula is formally correct. A discussion is given of the equivalent noise temperature of the hot electrons.
Keywords
Conductors; Diodes; Electrons; FETs; Gunn devices; Noise measurement; Solid state circuits; Tellurium; Temperature; Thermal conductivity;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1971.17315
Filename
1476637
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