DocumentCode
1041529
Title
An approach to modeling total dose ionizing radiation effects in Hg 1-xCdxTe photodiodes using PISCES II-B
Author
Petrosky, J.C. ; Howard, J.W., Jr. ; Block, R.C. ; Bhat, I. ; Stauber, M.C.
Author_Institution
Rensselaer Polytech. Inst., Troy, NY, USA
Volume
40
Issue
6
fYear
1993
fDate
12/1/1993 12:00:00 AM
Firstpage
1597
Lastpage
1601
Abstract
A 2-D numerical device simulator has been modified to account for the electrical characteristics of mercury cadmium telluride (MCT). The authors compare the simulated current-voltage (I-V) results with measurements. For diodes not dominated by tunneling or other surface effects, the simulated curves match the measurement within the experimental limitations. The modified code can be used to investigate the changes in the I-V characteristics of irradiated diodes. By adding the appropriate models. The authors show the results of an investigation of the band-to-band tunneling in these diodes, which theory predicts is a dominant current-producing mechanism after irradiation. The I-V curves closely match those of irradiated diodes if radiation-induced trapped surface charge is taken into account
Keywords
II-VI semiconductors; cadmium compounds; electronic engineering computing; mercury compounds; photodiodes; radiation effects; semiconductor device models; 2-D numerical device simulator; Hg1-xCdxTe photodiodes; I-V characteristics; II-VI semiconductor; PISCES II-B; band-to-band tunneling; modified code; total dose ionizing radiation effects; trapped surface charge; Annealing; Computational modeling; Computer simulation; Diodes; Ionizing radiation; Mercury (metals); Passivation; Photodiodes; Tellurium; Tunneling;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/23.273501
Filename
273501
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