DocumentCode :
1041538
Title :
Total dose effect on ferroelectric PZT capacitors used as non-volatile storage elements
Author :
Moore, R.A. ; Benedetto, J. ; Rod, B.J.
Author_Institution :
US Army Res. Lab., Adelphi, MD, USA
Volume :
40
Issue :
6
fYear :
1993
fDate :
12/1/1993 12:00:00 AM
Firstpage :
1591
Lastpage :
1596
Abstract :
The effects of ionizing radiation on the retained polarization of lead zirconate titanate (PZT) thin films are examined. The retained polarization is the key parameter in measuring the radiation tolerance of the PZT storage element in a nonvolatile memory. Data from the retained polarization measurement show a larger radiation-induced degradation that has generally been reported using the traditional hysteresis loop method for measuring remanent polarization. It appears that the difference is due in part to a cycling-induced annealing effect during the hysteresis loop measurement
Keywords :
X-ray effects; annealing; dielectric hysteresis; dielectric polarisation; electron device testing; ferroelectric storage; lead compounds; thin film capacitors; PbZrO3TiO3; X-ray irradiation; cycling-induced annealing effect; ferroelectric PZT capacitors; hysteresis loop measurement; ionizing radiation; nonvolatile memory; radiation tolerance; radiation-induced degradation; retained polarization; thin films; total dose effect; Annealing; Capacitors; Degradation; Ferroelectric materials; Hysteresis; Ionizing radiation; Nonvolatile memory; Polarization; Titanium compounds; Transistors;
fLanguage :
English
Journal_Title :
Nuclear Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/23.273502
Filename :
273502
Link To Document :
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