DocumentCode :
1041581
Title :
Theoretical and experimental gain of electron-excited silicon targets
Author :
Guldberg, Jens ; Schroder, Dieter K.
Author_Institution :
Westinghouse Electric Corporation, Pittsburgh, Pa.
Volume :
18
Issue :
11
fYear :
1971
fDate :
11/1/1971 12:00:00 AM
Firstpage :
1029
Lastpage :
1035
Abstract :
A theoretical model for target gain of electron-excited silicon diode array targets is developed. Its validity is established by comparison with experimental data and it is then used to study the gain dependence on n+layer, "dead" layer thickness, surface recombination velocity, lifetime, target thickness, and electron energy. Because the theory deals directly with the "dead" layer, the n+diffusion region and the built-in electric field rather than utilizing the concept of an effective surface recombination velocity, it allows a physical insight into the effects of the various target parameters on target gain. Conditions for maximum gain are established as well as those necessary for particular gain curves such as might be desired for variable image section gain operation.
Keywords :
Cameras; Electrons; Gain; Ionization; Photonic band gap; Radiative recombination; Semiconductor diodes; Semiconductor materials; Silicon; Spontaneous emission;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1971.17327
Filename :
1476649
Link To Document :
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