DocumentCode :
1041589
Title :
The Epiconcamera tube: An epitaxial diode array vidicon
Author :
Blumenfeld, S. Morry ; Ellis, George W. ; Redington, Rowland W. ; Wilson, Ronald H.
Author_Institution :
General Electric Company, Schenectady, N. Y.
Volume :
18
Issue :
11
fYear :
1971
fDate :
11/1/1971 12:00:00 AM
Firstpage :
1036
Lastpage :
1042
Abstract :
The structure and processing of epitaxial silicon diode array targets for vidicon camera tubes are described with emphasis on the way they differ from conventional silicon diode array targets. These targets, called Epiconvidicon targets, are generally similar to other silicon vidicon targets, but have the p-type boron diffused islands replaced by pyramidal or mesa-like structures that extend through the oxide apertures and up and over the oxide. The target is a self-registered conducting cap-type structure and does not require a resistive sea for its operation. It has some additional advantages in its structure and its processing over the other silicon diode array target. A comparison of the results of some selective epitaxy processes is briefly made. Some of the operating characteristics of the tube are described.
Keywords :
Apertures; Boron; Cameras; Cathodes; Diodes; Epitaxial growth; Fabrication; Helium; Silicon; Substrates;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1971.17328
Filename :
1476650
Link To Document :
بازگشت