Title :
hFEfalloff at low temperatures
Author :
Gopen, Howard J. ; Yu, Albert Y C
Author_Institution :
Intel Corporation, Mountain View, Calif.
fDate :
12/1/1971 12:00:00 AM
Abstract :
It is shown that for shallow planar bipolar transistors, tunneling, currents through the emitter-base junction can cause pronounced hFEfalloff at low temperatures.
Keywords :
Bipolar transistors; Cameras; Helium; Instruments; Iron; Laboratories; Microwave transistors; Research and development; Temperature dependence; Tunneling;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1971.17345
