Influence of slip plane dislocations on electrical performances of N-P-N planar transistors

Dislocations have been introduced in a well-controlled way in n-p-n bipolar transistors diffused on ∠111∠ silicon by plastic deformation. Two different geometries have been considered. While the collector current shows the well-known theoretical dependence on emitter-base voltage, the base current is significantly increased and is strongly affected by base surface potential. Low-frequency noise performances are also reported.