DocumentCode :
1041819
Title :
Active-device capacitances
Author :
Cherry, Edward M.
Author_Institution :
Monash University, Clayton, Victoria, Australia
Volume :
18
Issue :
12
fYear :
1971
fDate :
12/1/1971 12:00:00 AM
Firstpage :
1166
Lastpage :
1168
Abstract :
The charge-control capacitance ∂Q/∂V looking into a device port is not in general equal to the intrinsic small-signal capacitance found from the low-frequency admittance ratios up to 7:1 occur in practice. This paper explains why the discrepancy occurs, and derives the condition for the discrepancy to be zero. Finally, it is shown that charge-control theory does correctly predict the gain-bandwidth product of an active device.
Keywords :
Admittance; Aerodynamics; Capacitance; Electrodes; FETs; Frequency; Gases; Notice of Violation; Steady-state; Voltage;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1971.17350
Filename :
1476672
Link To Document :
بازگشت