A composite model for Schottky diode barrier height

A composite model, which includes both electrostatic screening and an interfacial region, is developed for Schottky diode barrier height. The model is used to calculate barrier height as a function of donor concentration for a gold-on-silicon diode structure. The results show that the influence of electrostatic screening on the barrier height is small and that the barrier height decreases rapidly for donor concentrations greater than 10¹⁷cm^-3.