DocumentCode :
1041882
Title :
Electron and neutron radiation-induced order effect in gallium arsenide
Author :
Khanna, Shyam M. ; Rejeb, Chedly ; Jorio, Anouar ; Parenteau, Martin ; Carlone, Cosmo ; Gerdes, John W., Jr.
Author_Institution :
Defense Res. Establ., Ottawa, Ont., Canada
Volume :
40
Issue :
6
fYear :
1993
fDate :
12/1/1993 12:00:00 AM
Firstpage :
1350
Lastpage :
1359
Abstract :
Electron (7 MeV) and neutron (1 MeV equivalent fluence damage in silicon) radiation effects in GaAs grown by the metallorganic chemical vapor deposition method are investigated. One series of samples was intentionally undoped, and another was doped n-type to 2.5×1015 Si/cm3. The fluences ranged from 10 10 to 6×1015 cm-2 for electron irradiation and from 1012 to 3×1015 cm-2 for fission spectrum neutron irradiation expressed as 1 MeV equivalent fluence in silicon. The radiation damage was characterized by low-temperature photoluminescence (PL) measurements using 1.58 eV laser excitation, deep level transient spectroscopy and transport measurements. The observed decrease of trap concentration accompanied with an increase in PL intensity at lower fluences, an increase in the density of traps at higher fluences, and a fluence-dependent oscillatory PL intensity for acceptor levels indicate radiation-induced order at low fluences following by nonuniform reorganization of defects with radiation in GaAs
Keywords :
III-V semiconductors; annealing; deep level transient spectroscopy; electron beam effects; electron traps; gallium arsenide; luminescence of inorganic solids; neutron effects; photoluminescence; semiconductor epitaxial layers; 1 MeV; 7 MeV; III-V semiconductor; annealing; deep level transient spectroscopy; density of traps; electron irradiation; electron trap; epitaxial films; fission spectrum neutron irradiation; fluence-dependent; laser excitation; low-temperature photoluminescence; n-type doped; nonuniform reorganization of defects; radiation-induced order effect; undoped; Atomic measurements; Chemical vapor deposition; Electron traps; Gallium arsenide; Neutrons; Photoluminescence; Radiation effects; Silicon; Spectroscopy; Temperature measurement;
fLanguage :
English
Journal_Title :
Nuclear Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/23.273532
Filename :
273532
Link To Document :
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