Title :
Effects of post-stress hydrogen annealing on MOS oxides after 60Co irradiation or Fowler-Nordheim injection
Author :
Saks, N.S. ; Klein, R.B. ; Stahlbush, R.E. ; Mrstik, B.J. ; Rendell, R.W.
Author_Institution :
US Naval Res. Lab., Washington, DC, USA
fDate :
12/1/1993 12:00:00 AM
Abstract :
Changes in interface trap density, Dit, have been determined in MOSFETs as a function of time during hydrogen annealing at 295 K. Large increases in Dit are observed during H2 annealing in MOSFETs previously stressed by either 60Co irradiation or Fowler-Nordheim electron injection. The annealing behavior is very similar for both types of stress, and this suggests that the Dit creation mechanism involves similar chemistry for hydrogen reactions. Studies of the time dependence of D it creation as a function of MOSFET gate length show that the time dependence is limited primarily by lateral diffusion of molecular hydrogen through the gate oxide. An activation energy of 0.57 eV, which is consistent with H2 diffusion, is obtained from the temperature dependence
Keywords :
annealing; gamma-ray effects; insulated gate field effect transistors; interface electron states; semiconductor-insulator boundaries; tunnelling; Fowler-Nordheim electron injection; H2 annealing; MOS oxides; MOSFETs; Si-SiO2; SiO2; SiO2-H2; activation energy; gate length; interface trap density; lateral diffusion; post-stress annealing; time dependence; Annealing; Charge carrier processes; Chemistry; Electron traps; Hot carriers; Hydrogen; Laboratories; MOSFETs; Stress; Temperature dependence;
Journal_Title :
Nuclear Science, IEEE Transactions on
