Title :
Experimental evidence of two species of radiation induced trapped positive charge
Author :
Freitag, R.K. ; Brown, D.B. ; Dozier, C.M.
Author_Institution :
US Naval Res. Lab., Washington, DC, USA
fDate :
12/1/1993 12:00:00 AM
Abstract :
The effects of alternating bias anneals of MOS transistors following either X-irradiation or Fowler-Nordheim tunneling have been studied. It is found that some of the generated defects can be repeatedly charged and discharged with a change of applied oxide field. Two models that may explain this phenomenon are discussed. One assumes a single defect, the E´ center, while the other is a two-defect model. The authors present results that are shown to be more consistent with the two-defect model
Keywords :
X-ray effects; annealing; electron traps; hole traps; insulated gate field effect transistors; semiconductor device models; tunnelling; CMOS; E´ center; Fowler-Nordheim tunneling; MOS transistors; X-ray irradiation; alternating bias anneals; applied oxide field; models; radiation induced trapped positive charge; single defect; trapped holes; two-defect model; Annealing; Charge carrier processes; Electron traps; Ionizing radiation; Laboratories; MOS capacitors; MOSFETs; Silicon compounds; Stress; Tunneling;
Journal_Title :
Nuclear Science, IEEE Transactions on
