Separation of effects of oxide-trapped charge and interface-trapped charge on mobility in irradiated power MOSFETs

Author

Zupac, D. ; Galloway, K.F. ; Khosropour, P. ; Anderson, S.R. ; Schrimpf, R.D. ; Calvel, P.

Author_Institution

Dept. of Electr. & Comput. Eng., Univ. of Arizona, Tucson, AZ, USA

Volume

40

Issue

6

fYear

1993

fDate

12/1/1993 12:00:00 AM

Firstpage

1307

Lastpage

1315

Abstract

An effective approach to separating the effects of oxide-trapped charge and interface-trapped charge on mobility degradation in irradiated MOSFETs is demonstrated. It is based on analyzing mobility data sets that have different functional relationships between the radiation-induced-oxide-trapped charge and interface-trapped charge. Separation of the effects of these two trapped charge components is only possible if they are not linearly dependent. A significant contribution of oxide-trapped charge to mobility degradation is demonstrated and quantified

Keywords

annealing; carrier mobility; electron traps; gamma-ray effects; insulated gate field effect transistors; interface electron states; power transistors; semiconductor device models; semiconductor device testing; annealing; gamma irradiation; interface-trapped charge; irradiated power MOSFETs; mobility degradation; oxide-trapped charge; radiation-induced trapped charge; Annealing; Contracts; Data analysis; Degradation; Ionizing radiation; MOSFETs; Scattering; Stress; Sun; Temperature;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.273537

Filename

273537