DocumentCode :
1041936
Title :
A comparison of two transistor models
Author :
Aaronson, Gerald ; Schilling, Ronald B.
Author_Institution :
GTE Laboratories, Inc., Bayside, N. Y.
Volume :
19
Issue :
1
fYear :
1972
fDate :
1/1/1972 12:00:00 AM
Firstpage :
1
Lastpage :
3
Abstract :
The equivalence of Gummel´s [1] charge control model and Schilling´s [2] regional model for a one-dimensional bipolar transistor is demonstrated.
Keywords :
Bipolar transistors; Current density; Doping profiles; Laboratories; Mathematical model; Monitoring; Nonlinear equations; Poisson equations; Solid state circuits; Voltage;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1972.17362
Filename :
1476833
Link To Document :
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