Title :
Low temperature proton irradiation of GaAs MESFETs
Author :
Shaw, G.J. ; Xapsos, M.A. ; Weaver, B.D. ; Summers, G.P.
Author_Institution :
US Naval Res. Lab., Washington, DC, USA
fDate :
12/1/1993 12:00:00 AM
Abstract :
GaAs MESFETs and resistors were irradiated with 3 MeV protons at irradiation temperatures (TIRR) in the 100 K⩽TIRR ⩽300 K range. It was found that irradiation at TIRR⩽225 K was about 2.5 times more effective at degrading the DC electrical parameters of the MESFETs than irradiation at room temperature. Isochronal annealing experiments showed that there was no apparent recovery of the radiation-induced degradation for annealing temperatures below 225 K. Both the MESFETs and the resistors exhibited a broad annealing stage near 270 K. The implications for spaceborne GaAs devices operating at cryogenic temperatures are discussed
Keywords :
III-V semiconductors; Schottky gate field effect transistors; annealing; gallium arsenide; proton effects; semiconductor device testing; 100 to 300 K; 3 MeV; DC electrical parameters; GaAs; III-V semiconductor; MESFETs; cryogenic temperatures; isochronal annealing; low temperature; proton irradiation; radiation-induced degradation; spaceborne devices; Annealing; Cryogenics; Doping; FETs; Gallium arsenide; Laboratories; MESFETs; Protons; Resistors; Temperature;
Journal_Title :
Nuclear Science, IEEE Transactions on
