Title :
A SiGe BiCMOS transmitter module for IMT2000 applications
Author :
Lee, Hui Dong ; Kim, Chung-Hwan ; Hong, Songcheol
Author_Institution :
Korea Adv. Inst. of Sci. & Technol., South Korea
Abstract :
This paper describes a Tx module for IMT2000 applications consisting of an up-conversion mixer and a variable-gain driver amplifier. The up-conversion mixer, based on the Gilbert active topology has a power gain of 4.8 dB and consumes 15-mA current from a 3-V supply. The variable-gain driver amplifier comprises a gain-controlled stage of the current steering structure and a common emitter stage, and has a variable-gain range of over 30 dB with 30.3-mA current consumption. The Tx module achieves a gain error of less than 1.2 dB over a 30-dB gain range, an output IP3 of 25 dBm, and an output PI dB of 7.4 dBm at the maximum gain of 24.5 dB. It occupies 1.0 × 1.2 mm.
Keywords :
3G mobile communication; BiCMOS analogue integrated circuits; MMIC; amplifiers; microwave mixers; radio transmitters; silicon compounds; 1.0 mm; 1.2 mm; 15 mA; 24.5 dB; 3 V; 30.3 mA; 4.8 dB; BiCMOS analog integrated circuits; BiCMOS transmitter module; Gilbert active topology; IMT2000 applications; MMIC transmitters; SiGe; Tx module; VGA; bipolar complementary metal oxide semiconductor; common emitter stage; current steering structure; gain-compensated circuit; microwave mixers; microwave monolithic integrated circuit; up-conversion mixer; variable-gain driver amplifier; BiCMOS integrated circuits; Driver circuits; Gain control; Germanium silicon alloys; MMICs; Mixers; Radio frequency; Radio transmitters; Radiofrequency amplifiers; Silicon germanium; BiCMOS; Bipolar complementary metal oxide semiconductor; MMIC; VGA; analog integrated circuits; gain-compensated circuit; microwave mixers; microwave monolithic integrated circuit; transmitters; variable-gain amplifier;
Journal_Title :
Microwave and Wireless Components Letters, IEEE
DOI :
10.1109/LMWC.2004.832631
