Title :
Steady-state junction temperatures of semiconductor chips
Author :
Lindsted, Robert D. ; Surty, Rohinton J.
Author_Institution :
Wichita State University, Wichita, Kans.
fDate :
1/1/1972 12:00:00 AM
Abstract :
The temperature drop between a transistor junction and the base of a silicon chip is dependent upon the power to be dissipated as well as the geometry of the device. This problem in three-dimensional heat conduction is analytically solved for boundary conditions which approximate a set of operating conditions. Nondimensional curves and examples summarizing typical solutions have been included to illustrate problem solving techniques.
Keywords :
Boundary conditions; Conductors; Geometry; Helium; Integrated circuit packaging; Problem-solving; Silicon; Steady-state; Temperature dependence; Temperature distribution;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1972.17369
