The VfTrelation of CW Gunn-effect devices

Theoretical device simulations and experimental results are presented to show that the origin of an empirical relationship between the bias voltage and transit frequency of CW longitudinal Gunn-effect devices lies in a combination of space-charge propagation effects and thermal effects. The bias current-voltage relationship is considerably altered by the particular details of the device doping profile through average accumulation or depletion effects, as well as by the temperature.