• DocumentCode
    1042042
  • Title

    The VfTrelation of CW Gunn-effect devices

  • Author

    Freeman, Kenneth R. ; Hobson, Geoffrey S.

  • Author_Institution
    University of Sheffield, Sheffield, England
  • Volume
    19
  • Issue
    1
  • fYear
    1972
  • fDate
    1/1/1972 12:00:00 AM
  • Firstpage
    62
  • Lastpage
    70
  • Abstract
    Theoretical device simulations and experimental results are presented to show that the origin of an empirical relationship between the bias voltage and transit frequency of CW longitudinal Gunn-effect devices lies in a combination of space-charge propagation effects and thermal effects. The bias current-voltage relationship is considerably altered by the particular details of the device doping profile through average accumulation or depletion effects, as well as by the temperature.
  • Keywords
    Circuit simulation; Computational modeling; Diodes; Doping profiles; Feedback; Frequency; Gunn devices; Marine vehicles; Temperature dependence; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1972.17372
  • Filename
    1476843
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1042042