Title :
Models for the lateral P-N-P transistor including substrate interaction
Author :
Callahan, M.J., Jr.
fDate :
1/1/1972 12:00:00 AM
Abstract :
The lateral p-n-p as used in linear integrated circuits has unique interactions with the substrate. Models which illustrate this behavior are shown and compared to the planar n-p-n transistor.
Keywords :
Analog integrated circuits; Capacitive sensors; Etching; Hafnium; Integrated circuit modeling; Residual stresses; Silicon; Substrates; Thin film circuits; Upper bound;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1972.17380
