Title :
Highly reliable GaN-based light-emitting diodes formed by p-In0.1Ga0.9N-ITO structure
Author :
Chang, Kow-Ming ; Chu, Jiunn-Yi ; Cheng, Chao-Chen
Author_Institution :
Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
Abstract :
Indium-tin-oxide (ITO) is deposited as a transparent current spreading layer of GaN-based light-emitting diodes (LEDs). To reduce the interfacial Schottky barrier height, a thin p-In0.1Ga0.9N layer is grown as an intermediate between ITO and p-GaN. The contact resistivity around 2.6×10-2 Ω·cm2 results in a moderately high forward voltage LED of 3.43 V operated at 20 mA. However, the external quantum efficiency and power efficiency are enhanced by 46% and 36%, respectively, in comparison with the conventional Ni-Au contact LEDs. In the life test, the power degradation of the p-In0.1Ga0.9N-ITO contact samples also exhibits a lower value than that of the conventional ones.
Keywords :
III-V semiconductors; Schottky barriers; contact resistance; gallium compounds; indium compounds; interface structure; life testing; light emitting diodes; semiconductor device reliability; semiconductor device testing; transparency; 20 mA; 3.43 V; 36 percent; 46 percent; GaN-based light-emitting diodes; In0.1Ga0.9N-InSnO; In0.1Ga0.9N-ITO; contact resistivity; indium-tin-oxide; interfacial Schottky barrier height; life test; p-In0.1Ga0.9N-ITO structure; power degradation; transparent current spreading layer; Annealing; Chaos; Conducting materials; Indium tin oxide; Light emitting diodes; MOCVD; Ohmic contacts; Optical devices; Quantum well devices; Thermal conductivity;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2004.830523
