DocumentCode
1042191
Title
Determination of deep levels in semiconductors from C-V measurements
Author
Glover, Gary H.
Author_Institution
General Electric Research and Development Center, Schenectady, N.Y.
Volume
19
Issue
2
fYear
1972
fDate
2/1/1972 12:00:00 AM
Firstpage
138
Lastpage
143
Abstract
A method is presented that allows deep level density and energy of impurities in semiconductors to be routinely determined from simple 
measurements of Schottky barriers. The method is particularly useful for material having levels with very long time constants that are not accessible by noise spectra measurements. The technique is illustrated by measurements of epitaxial n-GaAs which show a donor level at 0.83 eV below the conduction band.
measurements of Schottky barriers. The method is particularly useful for material having levels with very long time constants that are not accessible by noise spectra measurements. The technique is illustrated by measurements of epitaxial n-GaAs which show a donor level at 0.83 eV below the conduction band.Keywords
Acoustical engineering; Capacitance-voltage characteristics; Conducting materials; Density measurement; Energy measurement; Noise level; Schottky barriers; Semiconductor device noise; Semiconductor impurities; Semiconductor materials;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1972.17389
Filename
1476860
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