DocumentCode :
1042191
Title :
Determination of deep levels in semiconductors from C-V measurements
Author :
Glover, Gary H.
Author_Institution :
General Electric Research and Development Center, Schenectady, N.Y.
Volume :
19
Issue :
2
fYear :
1972
fDate :
2/1/1972 12:00:00 AM
Firstpage :
138
Lastpage :
143
Abstract :
A method is presented that allows deep level density and energy of impurities in semiconductors to be routinely determined from simple 
measurements of Schottky barriers. The method is particularly useful for material having levels with very long time constants that are not accessible by noise spectra measurements. The technique is illustrated by measurements of epitaxial n-GaAs which show a donor level at 0.83 eV below the conduction band.
measurements of Schottky barriers. The method is particularly useful for material having levels with very long time constants that are not accessible by noise spectra measurements. The technique is illustrated by measurements of epitaxial n-GaAs which show a donor level at 0.83 eV below the conduction band.Keywords :
Acoustical engineering; Capacitance-voltage characteristics; Conducting materials; Density measurement; Energy measurement; Noise level; Schottky barriers; Semiconductor device noise; Semiconductor impurities; Semiconductor materials;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1972.17389
Filename :
1476860
Link To Document :
