Title :
Low-voltage high-speed travelling wave InGaAsP-InP phase modulator
Author :
Zhang, L. ; Sinsky, J. ; Van Thourhout, D. ; Sauer, N. ; Stulz, L. ; Adamiecki, A. ; Chandrasekhar, S.
Author_Institution :
Lucent Technol., Bell Labs., Holmdel, NJ, USA
Abstract :
A high-speed low-drive-voltage travelling wave electrodes InGaAsP-InP phase modulator operated at 1.55 μm is demonstrated. The modulator is fabricated using a multiple quantum-well optical waveguide with an on chip integrated termination resistor. A small signal bandwidth of 35 GHz and a V/spl pi/ of 1.8 V has been demonstrated.
Keywords :
III-V semiconductors; Stark effect; electro-optical devices; gallium arsenide; high-speed optical techniques; indium compounds; integrated optics; microwave photonics; optical communication equipment; optical fabrication; optical modulation; optical waveguides; phase modulation; quantum well devices; semiconductor quantum wells; 1.5 V; 1.55 mum; 35 GHz; InGaAsP-InP; high electrorefractive effect; high-speed low-drive voltage multiple quantum well phase modulator; high-speed phase modulator; low-voltage high-speed travelling wave InGaAsP-InP phase modulator; multiple quantum-well optical waveguide; on chip integrated termination resistor; quantum confined Stark effect; travelling wave electrodes; Electrodes; High speed optical techniques; Optical modulation; Optical signal processing; Optical transmitters; Optical waveguides; Phase modulation; Quantum well devices; Ultrafast optics; Voltage;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2004.831291
