DocumentCode :
1042333
Title :
Oscillation mechanism of avalanche region of the IMPATT diode
Author :
Iiguchi, Shin-Ichi
Author_Institution :
University of Tokyo, Tokyo, Japan
Volume :
19
Issue :
2
fYear :
1972
fDate :
2/1/1972 12:00:00 AM
Firstpage :
251
Lastpage :
256
Abstract :
The oscillation mechanism of the avalanching region of the IMPATT diode is clarified by referring to the cavity resonator and feedback theories. When the avalanche takes place, the microwave electric field and the particle currents grow spacially. But the spacial growth does not directly mean the self-oscillation, as there exists the reflection loss at the region edges. When the gain due to the avalanche exceeds the reflection loss, the self-oscillation can take place. The preceding phenomena are analyzed by the conception of the open-loop transfer gain in feedback theory.
Keywords :
Cavity resonators; Charge carrier processes; Current density; Electrons; Equations; Feedback; Microwave devices; Reflection; Resonance; Semiconductor diodes;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1972.17404
Filename :
1476875
Link To Document :
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