DocumentCode
1042333
Title
Oscillation mechanism of avalanche region of the IMPATT diode
Author
Iiguchi, Shin-Ichi
Author_Institution
University of Tokyo, Tokyo, Japan
Volume
19
Issue
2
fYear
1972
fDate
2/1/1972 12:00:00 AM
Firstpage
251
Lastpage
256
Abstract
The oscillation mechanism of the avalanching region of the IMPATT diode is clarified by referring to the cavity resonator and feedback theories. When the avalanche takes place, the microwave electric field and the particle currents grow spacially. But the spacial growth does not directly mean the self-oscillation, as there exists the reflection loss at the region edges. When the gain due to the avalanche exceeds the reflection loss, the self-oscillation can take place. The preceding phenomena are analyzed by the conception of the open-loop transfer gain in feedback theory.
Keywords
Cavity resonators; Charge carrier processes; Current density; Electrons; Equations; Feedback; Microwave devices; Reflection; Resonance; Semiconductor diodes;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1972.17404
Filename
1476875
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