Title :
Insulated gate bipolar transistor (IGBT) modeling using IG-SPICE
Author :
Mitter, Chang Su ; Hefner, Allen R. ; Chen, Dan Y. ; Lee, Fred C.
Author_Institution :
Bradley Dept. of Electr. Eng., Virginia Polytech. Inst. & State Univ., Blacksburg, VA, USA
Abstract :
A physics-based model for the insulated gate bipolar transistor (IGBT) is implemented into the widely available circuit simulation package IG-SPICE. Based on analytical equations describing the semiconductor-physics, the model accurately describes the nonlinear junction capacitances, moving boundaries, recombination, and carrier scattering, and effectively predicts the device conductivity modulation. In this paper, the procedure used to incorporate the model into IG-SPICE and various methods necessary to ensure convergence are described. The effectiveness of the SPICE-based IGBT model is demonstrated by investigating the static and dynamic current sharing of paralleled IGBTs with different device model parameters. The simulation results are verified by comparison with experimental results
Keywords :
SPICE; digital simulation; equivalent circuits; insulated gate bipolar transistors; power transistors; semiconductor device models; IG-SPICE; IGBT; carrier scattering; circuit simulation package; conductivity modulation; dynamic current sharing; insulated gate bipolar transistor; modeling; moving boundaries; nonlinear junction capacitances; paralleled IGBTs; physics-based model; recombination; semiconductor-physics; simulation results; static current sharing; Capacitance; Circuit simulation; Conductivity; Convergence; Insulated gate bipolar transistors; Nonlinear equations; Predictive models; Radiative recombination; Scattering; Semiconductor device packaging;
Journal_Title :
Industry Applications, IEEE Transactions on
