Analysis of Negative Bias Temperature Instability in Body-Tied Low-Temperature Polycrystalline Silicon Thin-Film Transistors

Author

Chen, Chih-Yang ; Ma, Ming-Wen ; Chen, Wei-Cheng ; Lin, Hsiao-Yi ; Yeh, Kuan-Lin ; Wang, Shen-De ; Lei, Tan-Fu

Author_Institution

Inst. of Electron., Nat. Chiao Tung Univ., Hsinchu

Volume

29

Issue

2

fYear

2008

Firstpage

165

Lastpage

167

Abstract

Negative bias temperature instability (NBTI) degradation mechanism in body-tied low-temperature polycrystalline silicon thin-film transistors (LTPS TFTs) is analyzed by the charge-pumping (CP) technique. The properties of bulk trap states (including interface and grain boundary trap states) are directly characterized from the CP current. The increase of the fixed oxide charges is also extracted, which has not been quantified in previous studies of NBTI degradation in LTPS TFTs. The experimental results confirm that the NBTI degradation in LTPS TFTs is caused by the generation of bulk trap states and oxide trap states.

Keywords

elemental semiconductors; grain boundaries; interface states; silicon; thin film transistors; CP current; LTPS TFTs; NBTI; Si; body-tied low-temperature polycrystalline silicon thin-film transistors; charge-pumping technique; grain boundary trap states; interface trap states; negative bias temperature instability; Degradation; Grain boundaries; MOSFETs; Negative bias temperature instability; Niobium compounds; Silicon; Thermal conductivity; Thin film transistors; Titanium compounds; Voltage; Charge-pumping (CP) technique; low-temperature polycrystalline silicon thin-film transistors (LTPS TFTs); negative bias temperature instability (NBTI);

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2007.914083

Filename

4435965