Title :
On the removal of the memory properties of MNOS devices
Author :
Kendall, E.J.M. ; Haslett, J.W.
Author_Institution :
University of Calgary, Alta., Canada
fDate :
2/1/1972 12:00:00 AM
Abstract :
Results are presented to support the contention that the memory properties of MNOS and MNS devices are due to crystalline areas in the nitride. The memory effect was found to disappear when the crystalline areas were removed by ion implantation techniques.
Keywords :
Capacitance-voltage characteristics; Crystallization; Electron traps; Frequency; Hysteresis; Ion implantation; Semiconductor films; Silicon; Switches; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1972.17409
