Abstract :
Using first-principles calculations, effective mass for silicon channel region is investigated as a function of strain and substrate thickness. In {111} and {110} biaxially strained-Si, it is found that the longitudinal effective mass is extraordinarily enhanced for both thin films and crystals. This mass enhancement is caused by the change of the band structure with double minima into that with a single minimum due to strain and confinement. It is analytically shown that the effective mass diverges at the transition point. Further, we suggest the parameter regions of the strain, thickness, and confinement direction, which are most suitable for the experimental observation of the anomalies.
Keywords :
ab initio calculations; band structure; effective mass; elemental semiconductors; semiconductor thin films; silicon; Si; band structure; confinement; effective mass anomalies; first-principles calculations; strain; substrate thickness; thin films; transition point; Capacitive sensors; Crystals; Effective mass; Insulation; Nanoscale devices; Semiconductor thin films; Shape; Silicon on insulator technology; Slabs; Transistors; Silicon; silicon-on-insulator (SOI) technology; simulation; strain; thin films;
