Title :
Current-voltage characteristics of small size MOS transistors
Author :
Hoeneisen, B. ; Mead, C.A.
Author_Institution :
California Institute of Technology, Pasadena, Calif.
fDate :
3/1/1972 12:00:00 AM
Abstract :
One-dimensional analysis is used to find an upper and lower bound to the drain current of MOS transistors. The drain and source depletion regions and charge carrier velocity saturation are taken into account. These considerations are important in small devices.
Keywords :
Boundary conditions; Channel bank filters; Charge carriers; Current-voltage characteristics; MOSFETs; Permittivity; Silicon; Space charge; TV; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1972.17428
