• DocumentCode
    1042577
  • Title

    A new silicon vidicon with a CdTe—Si target

  • Author

    Yamato, T. ; Yoshikawa, S. ; Kobayashi, K. ; Matsuzaki, J. ; Tagoshima, I.

  • Author_Institution
    NHK Technical Research Laboratories, Tokyo, Japan
  • Volume
    19
  • Issue
    3
  • fYear
    1972
  • fDate
    3/1/1972 12:00:00 AM
  • Firstpage
    385
  • Lastpage
    386
  • Abstract
    A new type of a silicon vidicon target which utilizes blocking contacts between bulk semiconductor and a high resistive layer has been developed. The high resistive layer forms a blocking contact to the bulk and works also as a "resistive sea" layer, reducing complex fabrication processes. Structure of the target, tube characteristics, and video patterns are presented.
  • Keywords
    Cameras; Capacitance; Heterojunctions; Insulation; Multimedia communication; P-n junctions; Semiconductor diodes; Semiconductor materials; Silicon; TV broadcasting;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1972.17430
  • Filename
    1476901
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1042577