DocumentCode :
1042687
Title :
Gain in electrophotography—II: Charge transfer configuration
Author :
Melz, Peter J. ; Vahtra, Ulo
Author_Institution :
IBM Corporation, San Jose, Calif.
Volume :
19
Issue :
4
fYear :
1972
fDate :
4/1/1972 12:00:00 AM
Firstpage :
437
Lastpage :
447
Abstract :
The potential of the charge transfer imaging process for producing gain is considered under dynamic exposure conditions. A photoconductor with an ohmic or injecting contact to ground is assumed to be in virtual contact with a dielectric layer. The dielectric collects the charge transferred from the photoconductor under the influence of simultaneous exposure and application of high voltage. From simple arguments it can be demonstrated that the duration of the high voltage pulse is critical in optimizing the gain in the charge contrast. The qualitative results of the simple arguments are supported by detailed numerical calculations which demonstrate that a maximum gain of C_{ext}/2eC_{pc}\\simeq 0.184 C_{ext}/C_{pc} can be developed at a time approximately equal to (C_{ext}+C_{pc})/C_{pc} times the carrier transit time of the photoconductor. The results of the calculations are supported by experiments.
Keywords :
Capacitance; Charge carrier lifetime; Charge transfer; Conductors; Dielectrics; Electrostatics; Helium; Photoconductivity; Steady-state; Voltage;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1972.17441
Filename :
1476912
Link To Document :
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