Title :
Silicon tunneling field-effect transistors with tunneling in line with the gate field
Author :
Fischer, Inga Anita ; Bakibillah, A.S.M. ; Golve, Murali ; Hahnel, Daniel ; Isemann, H. ; Kottantharayil, Anil ; Oehme, Michael ; Schulze, J.
Author_Institution :
Inst. for Semicond. Eng., Univ. of Stuttgart, Stuttgart, Germany
Abstract :
We present experimental results on the fabrication and characterization of vertical Si tunneling field-effect transistors (TFETs) in a device geometry with tunneling in line with the gate field. Compared to vertical Si TFETs without this geometry modification, on-currents are increased by more than one order of magnitude with ION = 1.1 μA/μm at VDS = 0.5 V and an ION/IOFF ratio of 3.4 ·104 in n-channel operation. We present further suggestions for device improvements.
Keywords :
elemental semiconductors; field effect transistors; silicon; tunnelling; Si; TFET; gate field; geometry modification; n-channel operation; silicon tunneling field-effect transistors; voltage 0.5 V; Geometry; Logic gates; Performance evaluation; Silicon; Transistors; Tunneling; Semiconductor devices; transistors; tunneling; tunneling field-effect transistor (TFET);
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2012.2228250
