Title :
Efficient simulation of coupled circuit-field problems: generalized Falk method
Author :
Vu-Quoc, Loc ; Zhai, Yuhu ; Ngo, Khai D T
Author_Institution :
Mech. & Aerosp. Eng., Univ. of Florida, Gainesville, FL, USA
Abstract :
The proposed generalized Falk (GF) method offers an extremely simple and convenient way to solve coupled circuit-field problems in circuit simulators by transforming the discretized governing-field equations into guaranteed stable-and-passive one-dimensional (1D) equivalent-circuit systems, which are then combined with the circuit part of the overall coupled problem. More efficient than the traditional Lanczos-type methods, the GF method transforms a general finite-element system represented by a system of full matrices into an identity capacitance (mass) matrix and a tridiagonal conductance (stiffness) matrix. No positive poles are produced; all transformed matrices remain positive definite. The resulting 1D equivalent-circuit system contains only resistors, capacitors, inductors, and current sources. Several numerical examples are provided.
Keywords :
circuit simulation; coupled circuits; equivalent circuits; finite element analysis; insulated gate bipolar transistors; power convertors; power electronics; IGBT device; Lanczos-type methods; capacitors; circuit simulators; converters; coordinate transformation; coupled circuit-field problems; current sources; discretized governing-field equations; electrothermal coupled problem; electrothermal simulation; equivalent thermal circuit; finite-element system; generalized Falk method; identity capacitance matrix; inductors; insulated gate bipolar transistor; positive poles; power electronics; reorthogonalization; resistors; stable-and-passive 1D equivalent-circuit systems; transformed matrices; tridiagonal conductance matrix; Capacitance; Capacitors; Circuit simulation; Coupling circuits; Electrothermal effects; Equations; Finite element methods; Insulated gate bipolar transistors; Lab-on-a-chip; Resistors; 1-D; Converters; IGBT; coordinate transformation; coupled circuit-field problems; device; electrothermal simulation; equivalent thermal circuit; insulated gate bipolar transistor; power electronics; reorthogonalization; stable and passive one-dimensional;
Journal_Title :
Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on
DOI :
10.1109/TCAD.2004.832640
