Title :
The impact of light on current DLTS and gate-lag transients of AlGaAs-GaAs HFETs
Author :
Verzellesi, G. ; Cavallini, A. ; Basile, A.F. ; Castaldini, A. ; Canali, C.
Author_Institution :
Dipt. di Ingegneria dell´´Informazione, Univ. di Modena e Reggio Emilia, Italy
Abstract :
Gate-lag transients and "hole-like" deep level transient spectroscopy signals from AlGaAs-GaAs heterostructure field-effect transistors are shown to be suppressed by illumination with photons with energy larger than the AlGaAs bandgap. The observed pulse-response dependence on light intensity is reproduced and explained by two-dimensional numerical device simulations based on hole-trap behavior of surface deep levels.
Keywords :
III-V semiconductors; aluminium compounds; deep level transient spectroscopy; gallium arsenide; hole traps; power field effect transistors; semiconductor device models; surface states; transient response; 2D numerical device simulations; AlGaAs bandgap; AlGaAs-GaAs; HFET; charge carrier processes; current DLTS; gate-lag transients; heterostructure field-effect transistors; hole-like deep level transient spectroscopy signals; hole-trap behavior; light impact; light intensity; microwave power FET; photon illumination; pulse-response dependence; surface deep levels; transient response; Aluminum gallium nitride; FETs; Gallium nitride; HEMTs; Irrigation; Lighting; MODFETs; Numerical simulation; Photonic band gap; Spectroscopy; Aluminum compounds; charge carrier processes; gallium compounds; microwave power FETs; transient response;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2004.831965
