Title :
Performance of Read diodes at K band
Author :
Kondo, Atsushi ; Ishii, T.
Author_Institution :
Mitsubishi Electric Corporation, Itami, Hyogo, Japan
fDate :
5/1/1972 12:00:00 AM
Abstract :
K-band Read diodes were fabricated with a combination of epitaxial deposition and diffusion process. The diode produced 250 mW at 19.6 GHz with an efficiency of 5.3 percent and two chips mounted diode delivered 410 mW at 17.6 GHz.
Keywords :
Boron; Capacitance-voltage characteristics; Conductivity; Diodes; Epitaxial layers; Impurities; Power generation; Radio frequency; Semiconductor device measurement; Substrates;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1972.17480
