DocumentCode
1043114
Title
Avalanche breakdown criterion from doping profile integral
Author
Tantraporn, W. ; Glover, Gary H.
Volume
19
Issue
5
fYear
1972
fDate
5/1/1972 12:00:00 AM
Firstpage
697
Lastpage
698
Abstract
We point out that the area under the measured doping profile curve from the junction to the depth reached at breakdown affords an unambiguous test for "bulk" (as opposed to edge or surface) avalanche breakdown in a p-n or Schottky junction.
Keywords
Avalanche breakdown; Bonding; Conducting materials; Conductive films; Doping profiles; Electrons; P-n junctions; Space vector pulse width modulation; Temperature; Thermal stresses;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1972.17482
Filename
1476953
Link To Document