Title :
The distribution of gains in uniformly multiplying avalanche photodiodes: Experimental
Author_Institution :
RCA Ltd., Ste. Annede-Bellevue, P. Q., Canada,
fDate :
6/1/1972 12:00:00 AM
Abstract :
Experimental measurements of the gain distribution and noise spectral density of silicon avalanche photodiodes are presented and compared with McIntyre´s theories [7], [8]. Excellent agreement is obtained using keff, the effective ratio of the hole and electron ionization coefficients, as the only adjustable parameter.
Keywords :
Avalanche photodiodes; Charge carrier processes; Density measurement; Fluctuations; Gain measurement; Ionization; Noise measurement; P-i-n diodes; Signal to noise ratio; Silicon;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1972.17486
